Design and imaging demonstrations of a terahertz quasi-optical Schottky diode detector
Received:March 16, 2018  Revised:April 04, 2018  download
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Author NameAffiliationE-mail
LI Ming-Xun Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,School of Information and Electronics,Beijing Institute of Technology lmxxbit@163.com 
MOU Jin-Chao Aerospace Long March Launch Vehicle Technology CO,LTD moujinchao@live.com 
GUO Da-Lu Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,School of Information and Electronics,Beijing Institute of Technology  
QIAO Hai-Dong Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,School of Information and Electronics,Beijing Institute of Technology  
MA Zhao-Hui Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,School of Information and Electronics,Beijing Institute of Technology  
LYU Xin Beijing Key Laboratory of Millimeter Wave and Terahertz Technology,School of Information and Electronics,Beijing Institute of Technology  
Abstract:A terahertz quasi-optical detector has been presented, which is mainly composed of a GaAs antenna-coupled Schottky diode chip and a highly resistive silicon lens.In order to reduce the ohmic loss, the standard terahertz Schottky diode fabrication process has been improved by forming the antenna patterns on the semi-insulating GaAs layer.Experimental responsivity and DSB conversion loss of the quasi-optical detector are 1 360 ~ 1 650 V/W and10.6 ~ 12.5 dB at 335 ~ 350 GHz range, respectively.The noise equivalent power (NEP) is estimated to be 1.65~ 2 pW/Hz1/2.Imaging experiments based on this quasi-optical detector have been carried out in both direct-and heterodyne-detection modes, successfully demonstrating its potential in terahertz imaging applications.
keywords:terahertz quasi-optical detector, direct detection, heterodyne detection, terahertz imaging
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Copyright:《Journal of Infrared And Millimeter Waves》