A simple approach to obtain 2.0 μm GaSb laser by using high-order distributed Bragg reflector
Received:February 12, 2018  Revised:October 12, 2018  download
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Author NameAffiliationE-mail
HUANG Shu-Shan State Key Laboratory of Superlattices and MicrostructuresInstitute of Semiconductors, Chinese Academy of Sciences shshuang@semi.ac.cn 
YANG Cheng-Ao Institute of Semiconductors, Chinese Academy of Sciences  
ZHANG Yu Institute of Semiconductors, Chinese Academy of Sciences zhangyu@semi.ac.cn 
XIE Sheng-Wen Institute of Semiconductors, Chinese Academy of Sciences  
LIAO Yong-Ping Institute of Semiconductors, Chinese Academy of Sciences  
CHAI Xiao-Li Institute of Semiconductors, Chinese Academy of Sciences  
XU Ying-Qiang Institute of Semiconductors, Chinese Academy of Sciences  
NIU Zhi-Chuan Institute of Semiconductors, Chinese Academy of Sciences  
Abstract:GaSb-based DBR lasers with high-order Bragg gratings are fabricated without complex process.The16 th-order and 24 th-order Bragg gratings are fabricated with double-trench ridge waveguide by using standard contact optical lithography respectively.The 16 th-order Bragg grating laser achieves single longitudinal mode continuouswave (CW) operation at room temperature with side mode suppression ratio (SMSR) as high as 17.5 d B.The maximum single mode continuous-wave output power is more than 10 mW at room temperature.The laser shows a very excellent wavelength stability against injection current.The single spatial mode operation is maintained in the entire injection current range.The 24 th-order Bragg grating laser even shows a side mode suppression ratio up to22.5 d B at room temperature.The emission wavelength is around 2.0 μm.
keywords:laser diodes, quantum wells, infrared
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Copyright:《Journal of Infrared And Millimeter Waves》