(英)基于场效应晶体管的太赫兹探测器中天线设计的一种有效方法
Received:November 29, 2017  Revised:May 21, 2018  点此下载全文
引用本文:张博文,颜伟,李兆峰,白龙,杨富华.(英)基于场效应晶体管的太赫兹探测器中天线设计的一种有效方法[J].Journal of Infrared and Millimeter Waves,2018,37(4):389~392
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Author NameAffiliationE-mail
ZHANG Bo-Wen Institute of Semiconductors, Chinese Academy of Sciences zhangbw1992@semi.ac.cn 
YAN Wei Institute of Semiconductors, Chinese Academy of Sciences yanwei@semi.ac.cn 
LI Zhao-Feng Institute of Semiconductors, Chinese Academy of Sciences lizhaofeng@semi.ac.cn 
BAI Long Institute of Semiconductors, Chinese Academy of Sciences bailong@semi.ac.cn 
YANG Fu-Hua Institute of Semiconductors, Chinese Academy of Sciences fhyang@semi.ac.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),国家科技攻关计划,中国科学院百人计划项目,中国科学院重点资助项目
中文摘要:在场效应晶体管太赫兹探测器中,合理的天线设计可以增强晶体管和太赫兹波之间的耦合效率,从而提高太赫兹探测器的响应度。提出一种基于晶体管栅极边缘沟道电场的仿真来设计平面天线的方法。这种方法尤其适用于太赫兹波段晶体管输入阻抗不容易得到的情况。通过流片完成的基于氮化镓高电子迁移率晶体管的太赫兹探测器的响应度测试证实了这种方法的有效性。集成碟形天线和双偶极子天线的太赫兹探测器最大响应度分别在170.7GHz (1568.4V/W)和124.3GHz (1047.2V/W)频点处测得,这个测试结果接近基于晶体管栅极边缘沟道电场的仿真结果。
中文关键词:太赫兹探测器,平面天线,沟道电场,场效应晶体管
 
An effective method for antenna design in field effect transistor terahertz detectors
Abstract:In the implementation of field effect transistor (FET) terahertz (THz) detectors, the integration of properly designed planar antennas could effectively enhance the coupling efficiencies between the transistors and THz radiation, thus improving the responsivities of THz detectors. A method to design the planar antenna which is based on the simulation of channel electric field at the gate edge of FET is reported here.This method is suitable for the situation where the input impedances of FETs may not be conveniently obtained in the THz regime. The validity of this method in the antenna design is confirmed by the measurements of the fabricated GaN/AlGaN FET THz detectors.The maximum responsivities of the bowtie detector and the dual-dipole detector are obtained at 170.7 GHz (1568.4 V/W) and 124.3 GHz (1047.2 V/W) respectively, which are close to the simulation results of channel electric field at the gate edge of the bowtie detector and the dual-dipole detector.
keywords:terahertz detectors, planar antenna, channel electric field, field effect transistors
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