High power single-higher-mode VCSEL with inverted surface relief
Received:September 21, 2017  Revised:January 12, 2018  download
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Author NameAffiliationE-mail
WANG Xia National Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology 750239260@qq.com 
HAO Yong-Qin National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology hyq72081220@aliyun.com 
YAN Chang-Ling National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology  
WANG Zuo-Bin International Research Centre for Nano Handling and Manufacturing, Changchun University of Science and Technology  
WANG Zhi-Wei National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology  
XIE Jian-Lai National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology  
MA Xiao-Hui National Key Lab of High-Power Semiconductor Lasers, Changchun University of Science and Technology  
JIANG Hui-Lin NUERC of Space and Optoelectronics Technology, Changchun University of Science and Technology  
Abstract:An inverted surface relief vertical-cavity surface-emitting laser (ISR-VCSEL) with annular light emitting window has been presented and investigated. The most prominent structural feature of the device is that the stable single-higher-order transverse mode emission is supported. The laser emits output power up to 9.8 mW at about six times threshold current with an SMSR close to 30 dB, and it can still keep the output power of 4 mW even at as high ambient temperature as 360 K. The measured far field power intensity shows a Gaussian-shaped beam profile with low divergence.
keywords:semiconductor laser, vertical-cavity surface-emitting(VCSEL), single-higher-mode, high-temperature, inverted surface relief
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Copyright:《Journal of Infrared And Millimeter Waves》