基于标准CMOS工艺的线性APD的倍增区的优化仿真
Received:August 09, 2017  Revised:January 18, 2018  点此下载全文
引用本文:鞠国豪,程正喜,陈永平,钟燕平.基于标准CMOS工艺的线性APD的倍增区的优化仿真[J].Journal of Infrared and Millimeter Waves,2018,37(2):184~191
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Author NameAffiliationE-mail
JU Guo-Hao Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences jugh@shanghaitech.edu.cn 
CHENG Zheng-Xi Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
CHEN Yong-Ping Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences chen_yp@mail.sitp.ac.cn 
ZHONG Yan-Ping Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
基金项目:中国科学院上海技术物理研究所重点培育方向性项目“基于CMOS工艺的硅线性雪崩二极管”
中文摘要:采用标准CMOS工艺制备的n+-p-π-p+结构的线性APD,其倍增区p层的掺杂分布极大地影响着器件的性能。采用Silvaco仿真软件对倍增区p层进行了设计仿真,研究了p层的注入剂量和注入峰值浓度深度对器件特性的影响。仿真结果表明,设定器件增益为50,在p层的最佳注入剂量为1.82×1012 /cm2,峰值浓度深度为2.1 μm左右的最佳工艺条件下,器件的工作电压为73.1 V,过剩噪声因子为4.59,过剩噪声指数在0.34~0.45之间(波长λ = 800 nm),优于目前已报道的结果。通过工艺的优化,器件的性能可以得到进一步提高。
中文关键词:标准CMOS工艺  线性APD;掺杂分布;峰值浓度深度;仿真
 
Simulation of the multiplication zone for linear APD based on standard CMOS process
Abstract:The doping distribution in the multiplication zone of n+-p-π-p+ structured linear avalanche photodiode (APD) based on standard CMOS process greatly determines the device performance. The influence of implanting dose and the depth of its peak concentration of the p-layer on device characteristics are simulated using Silvaco. The simulation results show that, at a given gain of 50, the optimized doping dose of P layer is 1.82×1012 /cm2 with depth of peak concentration 2.1 μm. Under optimized conditions, the reverse bias voltage is 73.1 V, the excess noise factor is 4.59, and the excess noise index is 0.34~0.45 (λ = 800 nm),which are better than those reported. The performance of the APD may be further improved through process optimization.
keywords:standard CMOS process  linear APD  doping distribution  depth of peak concentration  simulation
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