Simulation of the multiplication zone for linear APD based on standard CMOS process
Received:August 09, 2017  Revised:January 18, 2018  download
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Author NameAffiliationE-mail
JU Guo-Hao Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences jugh@shanghaitech.edu.cn 
CHENG Zheng-Xi Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
CHEN Yong-Ping Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences chen_yp@mail.sitp.ac.cn 
ZHONG Yan-Ping Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
Abstract:The doping distribution in the multiplication zone of n+-p-π-p+ structured linear avalanche photodiode (APD) based on standard CMOS process greatly determines the device performance. The influences of implanting dose and the depth of its peak concentration of the p-layer on device characteristics are simulated using Silvaco. The simulation results show that, at a given gain of 50, the optimized doping dose of P layer is 1.82×1012/cm2 with depth of peak concentration 2.1 μm. Under optimized conditions, the reverse bias voltage is 73.1 V, the excess noise factor is 4.59, and the excess noise index is 0.34~0.45 (λ=800 nm),which are better than those reported. The performance of the APD may be further improved through process optimization.
keywords:standard CMOS process, linear APD, doping distribution, depth of peak concentration, simulation
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