2DEG characteristics of HEMT THz detector
Received:June 09, 2017  Revised:September 10, 2017  download
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Author NameAffiliationE-mail
LI Jin-Lun Department of Missile Engineering, Ordnance Engineering College. lijinlun@semi.ac.cn 
CUI Shao-Hui Department of Missile Engineering, Ordnance Engineering College.  
XU Jian-Xing State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences  
YUAN Ye State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences  
SU Xiang-Bin Institute of Photonics and Photon-Technology, Northwest University  
NI Hai-Qiao State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences nihq@semi.ac.cn 
NIU Zhi-Chuan State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences  
Abstract:GaAs/AlxGa1-xAs 2DEG samples are prepared by MBE. In the sample preparation process, by changing the Al component, the spacer layer thickness, contrast body doping and delta doping two methods, samples are analyzed by the Hall test in the 300K. It obtains the GaAs/ AlxGa1-xAs 2DEG channel structure with mobility is 7.205E3cm2/VS at room temperature, carrier concentration is 1.787E12/cm3. The THz response rate of GaAs-based HEMT structures with different channel widths at 300K and 77K temperatures is calculated by using Mathematica software. It provides a reference for the research and preparation of HEMT THz detectors.
keywords:HEMT  2DEG  mobility  THz detector
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