HEMT太赫兹探测器的二维电子气特性分析
Received:June 09, 2017  Revised:September 10, 2017  点此下载全文
引用本文:李金伦,崔少辉,徐建星,袁野,苏向斌,倪海桥,牛智川.HEMT太赫兹探测器的二维电子气特性分析[J].Journal of Infrared and Millimeter Waves,2017,36(6):790~794
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Author NameAffiliationE-mail
LI Jin-Lun Department of Missile Engineering, Ordnance Engineering College. lijinlun@semi.ac.cn 
CUI Shao-Hui Department of Missile Engineering, Ordnance Engineering College.  
XU Jian-Xing State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences  
YUAN Ye State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences  
SU Xiang-Bin Institute of Photonics and Photon-Technology, Northwest University  
NI Hai-Qiao State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences nihq@semi.ac.cn 
NIU Zhi-Chuan State Key Laboratory for SuperlatticesInstitute of SemiconductorsChinese Academy of Sciences  
基金项目:科技部“国家重大科学仪器设备开发专项”基金(2012YQ140005)
中文摘要:采用分子束外延技术(MBE)对GaAs/AlxGa1-xAs二维电子气(2DEG)样品进行了制备,样品制备过程中,通过改变Al的组分含量、隔离层厚度、对比体掺杂与δ掺杂两种方式,在300K条件下对制备的样品进行了霍尔测试,获得了室温迁移率7.205E3cm2/V?S,载流子浓度为1.787E12/cm3的GaAs/AlxGa1-xAs二维电子气沟道结构,并采用Mathematica软件分别计算了不同沟道宽度时300K、77K温度下GaAs基HEMT结构的太赫兹探测响应率,为HEMT场效应管太赫兹探测器的研究和制备提供了参考依据。
中文关键词:高电子迁移率晶体管  二维电子气  迁移率  太赫兹探测器
 
2DEG characteristics of HEMT THz detector
Abstract:GaAs/AlxGa1-xAs 2DEG samples are prepared by MBE. In the sample preparation process, by changing the Al component, the spacer layer thickness, contrast body doping and delta doping two methods, samples are analyzed by the Hall test in the 300K. It obtains the GaAs/ AlxGa1-xAs 2DEG channel structure with mobility is 7.205E3cm2/VS at room temperature, carrier concentration is 1.787E12/cm3. The THz response rate of GaAs-based HEMT structures with different channel widths at 300K and 77K temperatures is calculated by using Mathematica software. It provides a reference for the research and preparation of HEMT THz detectors.
keywords:HEMT  2DEG  mobility  THz detector
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