具有86 mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管
Received:April 27, 2017  Revised:May 18, 2017  点此下载全文
引用本文:刘强,赵清太,蔡剑辉,何佳铸,王翼泽,张栋梁,刘畅,任伟,俞文杰,刘新科.具有86 mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管[J].Journal of Infrared and Millimeter Waves,2017,36(5):543~549
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Author NameAffiliationE-mail
LIU Qiang Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University qiangliu@mail.sim.ac.cn 
ZHAO Qing-Tai Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich Q.Zhao@fz-juelich.de 
CAI Jian-Hui Department of Physics, Shanghai University caz1991@mail.sim.ac.cn 
HE Jia-Zhu College of Materials Science and Engineering, Shenzhen University 540339228@qq.com 
WANG Yi-Ze State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology wangyize@mail.sim.ac.cn 
ZHANG Dong-Liang State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology dlzhang@mail.sim.ac.cn 
LIU Chang State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology liuc23@mail.sim.ac.cn 
REN Wei Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University renwei@shu.edu.cn 
YU Wen-Jie State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology casan@mail.sim.ac.cn 
LIU Xin-Ke College of Materials Science and Engineering, Shenzhen University xkliu@szu.edu.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目); 信息功能材料国家重点实验室开放项目 ;广东省公众福利建设基金;深圳科学技术发展基金
中文摘要:在SiO2/Si(P++)衬底上制备了多层MoS2背栅器件并进行了测试.通过合理优化和采用10 nm SiO2 栅氧, 得到了良好的亚阈值摆幅86 mV/dec和约107倍的电流开关比.该器件具有较小的亚阈值摆幅和较小的回滞幅度, 表明该器件具有较少的界面态/氧化物基团吸附物.由栅极漏电造成的漏极电流噪声淹没了该器件在小电流(~10-13 A)处的信号, 限制了其开关比测量范围.基于本文以及前人工作中MoS2器件的表现, 基于薄层SiO2栅氧的MoS2器件表现出了良好的性能和潜力, 显示出丰富的应用前景.
中文关键词:MoS2  背栅器件  SiO2栅氧  良好的亚阈值斜率
 
86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2
Abstract:Back-gated (BG) Multi-layer MoS2 field effect transistors (FETs) have been fabricated on SiO2/Si(P++) substrate and electrically characterized. By optimizing the fabrication process and scaling down the SiO2 thickness to 10 nm, the device exhibit excellent switching performance with a subthreshold swing of 86 mV/dec and an Ion/Ioff ratio ~107. The little hysteresis and small SS jointly suggest tiny magnitude of interface traps or attached oxidants. The noise current induced by gate leakage can affect the measured switch ratio by overwhelming the effective Ioff current defined by VDS. According to the behaviors of MoS2 FETs expressed by this work and others’, BG devices with SiO2 insulator present good performance and valuable potentials underutilized for rich applications.
keywords:MoS2  back-gated device  SiO2 dielectric  excellent subthreshold swing.
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