86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2
Received:April 27, 2017  Revised:May 18, 2017  download
Citation:
Hits: 717
Download times: 288
Author NameAffiliationE-mail
LIU Qiang Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University qiangliu@mail.sim.ac.cn 
ZHAO Qing-Tai Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich Q.Zhao@fz-juelich.de 
CAI Jian-Hui Department of Physics, Shanghai University caz1991@mail.sim.ac.cn 
HE Jia-Zhu College of Materials Science and Engineering, Shenzhen University 540339228@qq.com 
WANG Yi-Ze State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology wangyize@mail.sim.ac.cn 
ZHANG Dong-Liang State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology dlzhang@mail.sim.ac.cn 
LIU Chang State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology liuc23@mail.sim.ac.cn 
REN Wei Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University renwei@shu.edu.cn 
YU Wen-Jie State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology casan@mail.sim.ac.cn 
LIU Xin-Ke College of Materials Science and Engineering, Shenzhen University xkliu@szu.edu.cn 
Abstract:Back-gated (BG) Multi-layer MoS2 field effect transistors (FETs) have been fabricated on SiO2/Si(P++) substrate and electrically characterized. By optimizing the fabrication process and scaling down the SiO2 thickness to 10 nm, the device exhibit excellent switching performance with a subthreshold swing of 86 mV/dec and an Ion/Ioff ratio ~107. The little hysteresis and small SS jointly suggest tiny magnitude of interface traps or attached oxidants. The noise current induced by gate leakage can affect the measured switch ratio by overwhelming the effective Ioff current defined by VDS. According to the behaviors of MoS2 FETs expressed by this work and others’, BG devices with SiO2 insulator present good performance and valuable potentials underutilized for rich applications.
keywords:MoS2  back-gated device  SiO2 dielectric  excellent subthreshold swing.
View Full Text  View/Add Comment  Download reader

Copyright:《Journal of Infrared And Millimeter Waves》