Preparation and characterization of Eu2+ -doped GaN luminescent nanofibers by electrospinning method
Received:March 24, 2017  Revised:September 19, 2017  download
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Author NameAffiliationE-mail
CHEN Yu State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences chenyu@semi.ac.cn 
WEI Xue-Cheng State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences  
LIU Hong-Wei Tianjin Key Laboratory Of Optoelectronic Detection Technology And System School of electronic and information engineering,Tianjin polytechnic university,Tianjin hwliu@foxmail.com 
Abstract:Eu2 -doped GaN (GaN:Eu2 ) nanofibers were synthesized by a facile approach that combined electrospinning and ammonification techniques. SEM and TEM images revealed that the nanofibers consist of GaN nanoparticles with uniform size. XRD result showed that the GaN:Eu2 sample predominantly exhibited the hexagonal phase of GaN (h-GaN) and the average grain size was evaluated to be 7.3 nm. Further Raman characterization showed that two extra GaN Raman shifts with the peaks of 252 and 422 cm-1 were observed. As was expected, characteristic strong blue emission from Eu2 ions doped in GaN matrix was observed at 407 nm in the photoluminescence spectrum.
keywords:GaN: Eu2 nanofibers  Blue emission  Electrospinning  Ammonification
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