电纺丝方法制备GaN:Eu2+ 纳米纤维与发光特征
Received:March 24, 2017  Revised:September 19, 2017  点此下载全文
引用本文:陈宇,魏学成,刘宏伟.电纺丝方法制备GaN:Eu2+ 纳米纤维与发光特征[J].Journal of Infrared and Millimeter Waves,2017,36(6):646~649
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Author NameAffiliationE-mail
CHEN Yu State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences chenyu@semi.ac.cn 
WEI Xue-Cheng State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences  
LIU Hong-Wei Tianjin Key Laboratory Of Optoelectronic Detection Technology And System School of electronic and information engineering,Tianjin polytechnic university,Tianjin hwliu@foxmail.com 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),中国博士后科学基金
中文摘要:通过结合静电纺丝和氨化技术方法合成了Eu2 掺杂的GaN(GaN:Eu2 )纳米纤维。SEM和TEM图像显示纳米纤维由尺寸均匀分布的GaN纳米颗粒组成。XRD测试结果表明GaN:Eu2 样品主要为六方相GaN(h-GaN),其平均粒径为7.3 nm。进一步的拉曼测试结果显示出现了两个额外的GaN拉曼位移,波数分别位于252和422 cm-1。室温光致发光谱表明GaN基质中的Eu 2 在407 nm处产生了强烈的特征蓝色发光峰。
中文关键词:关 键 词:GaN:Eu2 纳米纤维  蓝光  静电纺丝  氨化技术
 
Preparation and characterization of Eu2+ -doped GaN luminescent nanofibers by electrospinning method
Abstract:Eu2 -doped GaN (GaN:Eu2 ) nanofibers were synthesized by a facile approach that combined electrospinning and ammonification techniques. SEM and TEM images revealed that the nanofibers consist of GaN nanoparticles with uniform size. XRD result showed that the GaN:Eu2 sample predominantly exhibited the hexagonal phase of GaN (h-GaN) and the average grain size was evaluated to be 7.3 nm. Further Raman characterization showed that two extra GaN Raman shifts with the peaks of 252 and 422 cm-1 were observed. As was expected, characteristic strong blue emission from Eu2 ions doped in GaN matrix was observed at 407 nm in the photoluminescence spectrum.
keywords:GaN: Eu2 nanofibers  Blue emission  Electrospinning  Ammonification
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