Preparation and characterization of Eu2+ -doped GaN luminescent nanofibers by electrospinning method
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State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Tianjin Key Laboratory Of Optoelectronic Detection Technology And System School of electronic and information engineering,Tianjin polytechnic university,Tianjin

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    Abstract:

    Eu2 -doped GaN (GaN:Eu2 ) nanofibers were synthesized by a facile approach that combined electrospinning and ammonification techniques. SEM and TEM images revealed that the nanofibers consist of GaN nanoparticles with uniform size. XRD result showed that the GaN:Eu2 sample predominantly exhibited the hexagonal phase of GaN (h-GaN) and the average grain size was evaluated to be 7.3 nm. Further Raman characterization showed that two extra GaN Raman shifts with the peaks of 252 and 422 cm-1 were observed. As was expected, characteristic strong blue emission from Eu2 ions doped in GaN matrix was observed at 407 nm in the photoluminescence spectrum.

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CHEN Yu, WEI Xue-Cheng, LIU Hong-Wei. Preparation and characterization of Eu2+ -doped GaN luminescent nanofibers by electrospinning method[J]. Journal of Infrared and Millimeter Waves,2017,36(6):646~649

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History
  • Received:March 24,2017
  • Revised:September 19,2017
  • Adopted:June 22,2017
  • Online: November 30,2017
  • Published: