MgxNi1-xMn2O4薄膜结构与电学特性研究
Received:January 21, 2017  Revised:February 16, 2017  点此下载全文
引用本文:张增辉,刘 芳,侯 云,第文琦.MgxNi1-xMn2O4薄膜结构与电学特性研究[J].Journal of Infrared and Millimeter Waves,2017,36(4):415~419
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Author NameAffiliationE-mail
ZHANG Zeng-Hui School of Material Science and Engineering,University of Shanghai for Science and Technology zhangzh414@163.com 
LIU Fang School of Material Science and Engineering,University of Shanghai for Science and Technology liufang@usst.edu.cn 
HOU Yun National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences hyun@mail.sitp.ac.cn 
DI Wen-Qi School of Material Science and Engineering,University of Shanghai for Science and Technology;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences  
基金项目:国家自然科学基金(61275111),上海市国家自然基金(15ZR1445700)
中文摘要:采用化学溶液沉积法在Al2O3衬底上生长了MgxNi1-xMn2O4(MNM, x=0, 0.05, 0.10, 0.15, 0.20)薄膜.通过X射线衍射仪和场发射扫描电子显微镜研究了Mg掺杂浓度对MNM薄膜的结构特性的影响,MNM薄膜均匀致密,具有良好的结晶性,为单一立方尖晶石结构.MNM薄膜的变温电流-电压特性研究显示,MNM薄膜的电输运特性符合小极化子变程跳跃电导模型,同时获得了不同Mg掺杂浓度的MNM薄膜的电阻率、特征温度T0和负电阻温度系数α. 研究结果表明,Mg的掺杂对MNM薄膜的结构和电学特性都有一定的影响.
中文关键词:镁掺杂  尖晶石氧化物  负电阻温度系数
 
Study on the structural and electrical properties of MgxNi1-xMn2O4 thin films
Abstract:The MgxNi1-xMn2O4(MNM x=0, 0.05, 0.10, 0.15, 0.20) films were grown on Al2O3 substrate by chemical solution deposition method. The effect of Mg doping on the structural properties of MNM thin films was studied by x-ray diffraction and field emission scanning electron microscopy. The results show that the films have a single cubic spinel structure and the films aresmooth and uniform, which have good crystallinity. The electrical measurements show that the conduction of MNM thin films was described by a variable range hopping model. The values of resistivity, characteristic temperature T0, negative resistance temperature coefficient α for MNM thin films were obtained. The Mg concentration dependence of structural and electrical properties for MNM films was investigated.
keywords:Mg doping  spinel oxide  Negative temperature coefficient of resistance
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