Real-time γ irradiation effects on long-wavelength InAs/GaSb type II superlattice infrared detector
Received:January 20, 2017  Revised:February 20, 2017  download
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Author NameAffiliationE-mail
JIN Chuan Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences jinchuan@mail.sitp.ac.cn 
XU Jia-Jia Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
HUANG Ai-Bo Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
XU Zhi-Cheng Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
ZHOU Yi : Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
BAI Zhi-Zhong Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
WANG Fang-Fang Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
CHEN Jian-Xin : Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai jianxinchen@mail.sitp.ac.cn 
CHEN Hong-Lei Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
DING Rui-Jun Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
HE Li Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
Abstract:In this paper, the γ-irradiation effect on InAs / GaSb II superlattice long-wave detectors was studied. The detector has a good anti-radiation performance under the irradiation of 60Co γ-rays as the current-voltage (I-V) characteristics of the devices did not change significantly with the increase of the irradiation dose. And compared with the value before irradiation, the reduction rate of the zero-bias resistance was only 3.4% under the irradiation dose of 100Krad (Si). By combining the real-time I-V curves at different irradiation doses and the evolution of the dark current with time after the irradiation, the damage and the corresponding mechanism of the γ-irradiation were analyzed. At zero bias as well as small reverse bias, the current is obviously increased after irradiation. The radiation damage is dominated by the transient ionization effect, and the device performance can be recovered in a short time. While at large reverse bias, the main dark current mechanism is the direct tunneling current, leading to a decreased dark current with the increase of the irradiation dose. The time of the damage recovery is significantly longer than the ionization damage, and an annealing may be required.
keywords:Long-wave infrared detector, InAs /GaSb superlattice, Real-time γ irradiation effects
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Copyright:《Journal of Infrared And Millimeter Waves》