InAs/GaSb II类超晶格长波红外探测器的实时γ辐照效应
Received:January 20, 2017  Revised:February 20, 2017  点此下载全文
引用本文:靳 川,许佳佳,黄爱波,徐志成,周易,白治中,王芳芳,陈建新,陈洪雷,丁瑞军,何力.InAs/GaSb II类超晶格长波红外探测器的实时γ辐照效应[J].Journal of Infrared and Millimeter Waves,2017,36(6):688~693
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Author NameAffiliationE-mail
JIN Chuan Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences jinchuan@mail.sitp.ac.cn 
XU Jia-Jia Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
HUANG Ai-Bo Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
XU Zhi-Cheng Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
ZHOU Yi : Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
BAI Zhi-Zhong Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
WANG Fang-Fang Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
CHEN Jian-Xin : Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai jianxinchen@mail.sitp.ac.cn 
CHEN Hong-Lei Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
DING Rui-Jun Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
HE Li Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai  
基金项目:国家自然科学(No. 61505237, 61176082, 61290302, 61534006); 国家重点研发计划项目(No. 2016YFB0402403);上海市自然科学(No. 15ZR1445600,16ZR1447900) 资助。
中文摘要:本文研究了InAs/GaSb II 类超晶格长波探测器的γ 辐照效应。在60Co源γ 辐照下器件的电流-电压(I-V)特性并未随辐照剂量的增大而发生显著的变化,100Krad (Si)辐照剂量下的零偏电阻相较辐照前的减小率仅为3.4%,表明该探测器具有很好的抗辐照性能。结合不同辐照剂量下的实时I-V特性曲线和辐照停止后器件暗电流随时间的演化情况,对辐照所带来的器件性能的损伤以及微观损伤机理进行了分析。发现零偏压和小反向偏压下,辐照开始后电流即有明显增大,辐照损伤以暂态的电离效应为主导,器件性能可以在很短时间内恢复。而大反向偏压下器件暗电流的主导机制为直接隧穿电流,辐照所引入位移效应的影响使得暗电流随辐照剂量增大而减小,损伤需通过退火效应缓慢恢复,弛豫时间明显长于电离效应损伤。
中文关键词:长波红外探测器  InAs/GaSb II类超晶格  实时γ 辐照效应
 
Real-time γ irradiation effects on long-wavelength InAs/GaSb type II superlattice infrared detector
Abstract:In this paper, the γ-irradiation effect on InAs / GaSb II superlattice long-wave detectors was studied. The detector has a good anti-radiation performance under the irradiation of 60Co γ-rays as the current-voltage (I-V) characteristics of the devices did not change significantly with the increase of the irradiation dose. And compared with the value before irradiation, the reduction rate of the zero-bias resistance was only 3.4% under the irradiation dose of 100Krad (Si). By combining the real-time I-V curves at different irradiation doses and the evolution of the dark current with time after the irradiation, the damage and the corresponding mechanism of the γ-irradiation were analyzed. At zero bias as well as small reverse bias, the current is obviously increased after irradiation. The radiation damage is dominated by the transient ionization effect, and the device performance can be recovered in a short time. While at large reverse bias, the main dark current mechanism is the direct tunneling current, leading to a decreased dark current with the increase of the irradiation dose. The time of the damage recovery is significantly longer than the ionization damage, and an annealing may be required.
keywords:Long-wave infrared detector, InAs /GaSb superlattice, Real-time γ irradiation effects
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