Arsenic doping and activations in HgCdTe by MBE
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Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics,Shanghai Institute of Technical Physics

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    Abstract:

    The arsenic doping and activations on HgCdTe (mercury cadmium telluride) p+-on-n heterojunctions grown by MBE (molecular beam epitaxy) have got a lot of attention in fabricating high performance long-wavelength IRFPAs (infrared focal plane arrays). In this paper, the performances of HgCdTe diodes with different arsenic doping concentrations are presented. According to the I-V results and dark current mechanism, the effect of arsenic concentration on the trap-assisted tunneling current was calculated and analyzed. To achieve reproducible doping and activation process, the dependence between arsenic doping efficiency and Hg/Te condition was reported. As activation ratio could be higher than 60% under activated annealing at 300, 420 and 240 degree Celsius under an Hg saturated vapor pressure, which was demonstrated by means of Hall-effect measurements and SIMS (Secondary Ion Mass Spectrometry).

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ZHAO Zhen-Dian, CHEN Lu, FU Xiang-Liang, WANG Wei-Qiang, SHEN Chuan, ZHANG Bin, BU Shun-Dong, WANG Gao, YANG Feng, HE Li. Arsenic doping and activations in HgCdTe by MBE[J]. Journal of Infrared and Millimeter Waves,2017,36(5):575~580

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History
  • Received:December 22,2016
  • Revised:March 20,2017
  • Adopted:March 27,2017
  • Online: November 29,2017
  • Published: