Arsenic doping and activations in HgCdTe by MBE
Received:December 22, 2016  Revised:March 20, 2017  download
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Author NameAffiliationE-mail
ZHAO Zhen-Dian Center of Materials and DevicesShanghai Institute of Technical PhysicsChinese Academy of Sciences zzdkevin@126.com 
CHEN Lu Shanghai Institute of Technical Physics  
FU Xiang-Liang Shanghai Institute of Technical Physics  
WANG Wei-Qiang Shanghai Institute of Technical Physics  
SHEN Chuan Shanghai Institute of Technical Physics  
ZHANG Bin Shanghai Institute of Technical Physics  
BU Shun-Dong Shanghai Institute of Technical Physics  
WANG Gao Shanghai Institute of Technical Physics  
YANG Feng Shanghai Institute of Technical Physics  
HE Li Shanghai Institute of Technical Physics  
Abstract:The arsenic doping and activations on HgCdTe (mercury cadmium telluride) p+-on-n heterojunctions grown by MBE (molecular beam epitaxy) have got a lot of attention in fabricating high performance long-wavelength IRFPAs (infrared focal plane arrays). In this paper, the performances of HgCdTe diodes with different arsenic doping concentrations are presented. According to the I-V results and dark current mechanism, the effect of arsenic concentration on the trap-assisted tunneling current was calculated and analyzed. To achieve reproducible doping and activation process, the dependence between arsenic doping efficiency and Hg/Te condition was reported. As activation ratio could be higher than 60% under activated annealing at 300, 420 and 240 degree Celsius under an Hg saturated vapor pressure, which was demonstrated by means of Hall-effect measurements and SIMS (Secondary Ion Mass Spectrometry).
keywords:IRFPAs, HgCdTe, As-doping, MBE
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Copyright:《Journal of Infrared And Millimeter Waves》