Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应
Received:November 14, 2016  Revised:December 15, 2016  点此下载全文
引用本文:田锋,周远明,张小强,魏来明,梅菲,徐进霞,蒋妍,吴麟章,康亭亭,俞国林.Te元素掺杂Bi2Se3拓扑绝缘体纳米线的反弱局域效应[J].Journal of Infrared and Millimeter Waves,2017,36(3):270~275
Hits: 234
Download times: 252
Author NameAffiliationE-mail
TIAN Feng Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology tianfeng245@126.com 
ZHOU Yuan-Ming Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology ymzhou@mail.sitp.ac.cn 
ZHANG Xiao-Qiang Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China  
WEI Lai-Ming Hefei National Laboratory for Physical Sciences at the Microscale,University of Science and Technology of China  
MEI Fei Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology  
XU Jin-Xia Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology  
JIANG Yan Hubei Collaborative Innovation Center for High-efficiency Utilization of Solar Energy,Hubei University of Technology  
WU Lin-Zhang School of Electrical and Electronic Engineering,Hubei University of Technology  
KANG Ting-Ting National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences  
YU Guo-Lin National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences yug@mail.sitp.ac.cn 
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:采用Au催化的固-液-气(VLS)方法制备了单晶Bi2Se3和Bi2(TexSe1-x)3 纳米线, 研究了单根纳米线器件的输运性质.在对单根Bi2(TexSe1-x)3(x=0.26)纳米线的低温磁输运测试中观察到反弱局域效应, 说明样品中存在较强的自旋-轨道耦合.结果表明, Te掺杂可以有效抑制体电导对输运过程的影响.通过对不同温度下的磁电导曲线进行拟合, 得到了电子的退相干长度lφ , lφ 从1.5 K时的389 nm减小至20 K时的39 nm, 遵循lφ∝T-0.96指数变化规律.分析表明, 在Te掺杂样品的输运过程中, 电子-电子散射和电子-声子散射均起到了十分重要的作用.
中文关键词:拓扑绝缘体  Bi2Se3纳米线  反弱局域  退相干长度
 
Weak antilocalization effect in Tellurium-doped Bi2Se3 topological insulator nanowires
Abstract:Single-crystalline Bi2Se3 and Bi2(TexSe1-x)3 nanowires were synthesized via Au catalytic vapor-liquid-solid (VLS) growth method. Electronic properties of the surface states in individual Bi2(TexSe1-x)3 (x=0.26) nanowire were studied by low-temperature magnetotransport measurement. Weak antilocalization (WAL) effect was found, suggesting strong spin-orbit coupling in our samples. It is indicated that the bulk effect can be suppressed effectively by the Tellurium (Te) doping. By fitting the magnetoconductance curves at magnetic field up to 7 T measured at different temperatures, the extracted dephasing length lφ decreases from 389 nm at 1.5 K to 39 nm at 20 K, which can be well described by the power law lφ∝T-0.96. It can be reasonably deduced that both the electron-electron scattering and the electron-phonon scattering play important roles in the Te-doped sample.
keywords:Topological insulator  Bi2Se3 nanowires  weak antilocalization  dephasing length
View Full Text  View/Add Comment  Download reader

Copyright:《Journal of Infrared And Millimeter Waves》