Shallow impurity levels in CdZnTe probed by magneto-photoluminescence
Received:October 20, 2016  Revised:April 16, 2017  download
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Author NameAffiliationE-mail
QI Zhen National Laboratory for Infrared Physics Shanghai Institute of Technical Physics of the Chinese Academy of Sciences zhenqi@mail.sitp.ac.cn 
SHENG Feng-Feng The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
ZHU Liang The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
YANG Jian-Rong The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
CHEN Xi-Ren The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
SHAO Jun The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
Abstract:This paper reports photoluminescence (PL) and magneto-PL study of CdZnTe single crystal grown by Bridgman method. Magneto-PL measurements on two CdZnTe samples in the sample crystal were realized at low temperature with sufficiently high spectral resolution and signal-to-noise ratio. PL spectra reveal that the Te inclusions near the CdZnTe surface affects obviously the PL processes energetically below 1.5 eV. Further analysis with curve-fitting process shows that (1) stress distribution exists inside the CdZnTe sample without Te inclusions, and the stress causes the splitting of the heavy-and light-hole subband. (2) The 1.57-eV PL feature originates from the shallow-donor to valence-band recombination.
keywords:CdZnTe crystal  magneto-photoluminescence  stress  light-hole
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Copyright:《Journal of Infrared And Millimeter Waves》