磁光—光致发光分析CdZnTe单晶带边浅杂质能级
Received:October 20, 2016  Revised:April 16, 2017  点此下载全文
引用本文:祁镇,盛峰峰,朱亮,杨建荣,陈熙仁,邵军.磁光—光致发光分析CdZnTe单晶带边浅杂质能级[J].Journal of Infrared and Millimeter Waves,2017,36(5):589~593
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Author NameAffiliationE-mail
QI Zhen National Laboratory for Infrared Physics Shanghai Institute of Technical Physics of the Chinese Academy of Sciences zhenqi@mail.sitp.ac.cn 
SHENG Feng-Feng The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
ZHU Liang The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
YANG Jian-Rong The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
CHEN Xi-Ren The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
SHAO Jun The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
基金项目:国家重点基础研究发展计划(973计划)
中文摘要:通过对Bridgeman方法生长的CdZnTe单晶样品进行光致发光(Photoluminescence, PL)光谱测量, 发现CdZnTe样品表面Te沉淀物的存在明显影响能量低于1.5 eV的深能级发光过程.进一步对CdZnTe晶锭的不同位置取样进行低温变磁场光致发光光谱测试, 获得高分辨光谱信息.拟合分析结果表明: (1)在不含Te沉淀物的CdZnTe样品内部存在应力分布, 并因此导致轻、重空穴带分裂;(2)1.57 eV发光特征源于浅施主杂质与价带间的复合过程.
中文关键词:CdZnTe单晶  ;磁光光致发光光谱;应力;轻空穴
 
Shallow impurity levels in CdZnTe probed by magneto-photoluminescence
Abstract:This paper reports photoluminescence (PL) and magneto-PL study of CdZnTe single crystal grown by Bridgman method. Magneto-PL measurements on two CdZnTe samples in the sample crystal were realized at low temperature with sufficiently high spectral resolution and signal-to-noise ratio. PL spectra reveal that the Te inclusions near the CdZnTe surface affects obviously the PL processes energetically below 1.5 eV. Further analysis with curve-fitting process shows that (1) stress distribution exists inside the CdZnTe sample without Te inclusions, and the stress causes the splitting of the heavy-and light-hole subband. (2) The 1.57-eV PL feature originates from the shallow-donor to valence-band recombination.
keywords:CdZnTe crystal  magneto-photoluminescence  stress  light-hole
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