高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器
Received:September 27, 2016  Revised:October 19, 2016  点此下载全文
引用本文:柴小力,张宇,廖永平,黄书山,杨成奥,孙姚耀,徐应强,牛智川.高功率GaSb基2.6微米InGaAsSb/AlGaAsSb I型量子阱室温工作激光器[J].Journal of Infrared and Millimeter Waves,2017,36(3):257~260
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Author NameAffiliationE-mail
CHAI Xiao-Li Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics xlchai@semi.ac.cn 
ZHANG Yu Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics zhangyu@semi.ac.cn 
LIAO Yong-Ping Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics liaoyp981@semi.ac.cn 
HUANG Shu-Shan Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics shshuang@semi.ac.cn 
YANG Cheng-Ao Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics yangchengao@semi.ac.cn 
SUN Yao-Yao Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics yysun@semi.ac.cn 
XU Ying-Qiang Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics yingqxu@semi.ac.cn 
NIU Zhi-Chuan Chinese Academy of Sciences;Synergetic Innovation Center of Quantum Information and Quantum Physics zcniu@semi.ac.cn 
基金项目:国家重点基础研究发展计划(973计划)
中文摘要:成功制备出2.6μm GaSb基I型InGaAsSb/AlGaAsSb量子阱高功率半导体激光器.利用分子束外延设备(MBE)生长出器件的材料结构.为了得到更好的光学质量, 将量子阱的生长温度优化至500℃, 并将量子阱的压应变调节为1.3%.制备了脊宽100 μm 、腔长1.5 mm的激光单管器件.在未镀膜下该激光器实现了最大328 mW室温连续工作, 阈值电流密度为402 A/cm2, 在脉冲工作模式下, 功率达到700 mW.
中文关键词:GaSb基,半导体激光器,量子阱,中红外
 
High power GaSb-based 2.6 μm room-temperature laser diodes with InGaAsSb/AlGaAsSb type I quantum-wells
Abstract:GaSb-based InGaAsSb/AlGaAsSb type-I quantum-wells (QWs) laser diodes have been successfully fabricated. The wavelength is expanded to 2.6 μm with high output power. The device structures were grown by molecular beam epitaxy. Under the optimized QWs growth temperature of 500℃,the compressive strain of the QWs are defined to 1.3% for better optical quality. With a ridge width of 100μm and cavity length of 1.5 mm, the maximum output power of single facet without coating has reached up to 328 mW under continuous wave (CW) operation at room temperature and 700 mW under pulse condition. The threshold current density is 402 A/ cm2.
keywords:GaSb-based, laser 。diodes, quantum-wells, mid-infrared
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