330GHz砷化镓单片集成分谐波混频器
Received:September 19, 2016  Revised:November 11, 2016  点此下载全文
引用本文:刘戈,张波,张立森,王俊龙,邢东,樊勇.330GHz砷化镓单片集成分谐波混频器[J].Journal of Infrared and Millimeter Waves,2017,36(2):252~256
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Author NameAffiliationE-mail
Liu Ge School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu liuge041314@163.com 
Zhang Bo School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu zhangbo.uestc@163.com 
Zhang Li-sen National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute  
Wang Jun-long National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute  
Xing Dong National Key Laboratory of Application Specific Integrated Circuits,Hebei Semiconductor Research Institute  
Fan Yong School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu  
基金项目:国家自然基金(No.61301051);中央高校基本业务费(No.ZYGX2015J017);国家国际合作专项(No.2014DFA11110)
中文摘要:在太赫兹频段,二极管尺寸与波长相比已不能忽略,二极管的封装形式会引入很大的寄生参量,因此需建立二极管三维模型提取寄生参数。同时人工装配难度增大,会增加电路不确定性。采用12微米砷化镓单片集成悬置微带线结构,基于电子科技大学与中国电子科技集团第十三研究所自主联合设计的肖特基二极管研制330GHz砷化镓单片集成分谐波混频器。实测结果显示在5mW本振功率的驱动下,在328GHz可得到最小变频损耗10.4dB,在320-340GHz范围内,单边带变频损耗小于14.7dB。
中文关键词:太赫兹  单片集成分谐波混频器  肖特基二极管  砷化镓  变频损耗
 
330GHz GaAs monolithic integrated sub-harmonic mixer
Abstract:In the terahertz band, diode size can no longer be ignored compared with the wavelength, significant parasitic parameters will be introduced due to diode package, so it is very necessary to establish three-dimensional model to extract parasitic parameters. Meanwhile manual assembly becomes more difficult, circuit uncertainty will increase. A 330GHz GaAs monolithic integrated sub-harmonic mixer based on planar schottky barrier diode designed by China Electronics Technology Group Corporation-13(CETC-13) and University of Electronic Science and Technology of China(UESTC) fabricated on 12um thick suspended GaAs substrate was presented. Test results show that the minimum conversion loss is 10.4dB at 328GHz, SSB conversion loss was less than 14.7dB from 320GHz to 340GHz when the LO power is 5mW.
keywords:terahertz  monolithic integrated sub-harmonic mixer  schottky diode  GaAs  conversion loss  
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