简单化学水浴法制备SnO2/p-Si异质结光电性能
Received:July 15, 2016  Revised:October 29, 2016  点此下载全文
引用本文:何波,徐静,宁欢颇,赵磊,邢怀中,张建成,秦玉明,张磊.简单化学水浴法制备SnO2/p-Si异质结光电性能[J].Journal of Infrared and Millimeter Waves,2017,36(2):139~143
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Author NameAffiliationE-mail
HE Bo Department of Applied Physics,Donghua University laserhebo@163.com 
XU Jing Instrumental Analysis and Research Center,Shanghai University  
NING Huan-Po Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai  
ZHAO Lei Department of Physics, Shanghai University  
XING Huai-Zhong Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai xinghz@dhu.edu.cn 
ZHANG Jian-Chen School of Mechanical EngineeringGuangxi University  
QIN Yu-Ming Institute of Nonlinear ScienceDonghua University  
ZHANG Lei Shanghai Weifu Instrument Technology Company Limited  
基金项目:上海市联盟计划项目(LM201601),超细材料制备与应用教育部重点实验室( 华东理工大学) 开放课题基金(15Q10932),中央高校基本科研业务费(东华大学,16D110916)
中文摘要:SnO2薄膜沉积在晶硅衬底上通过一种简单化学水浴法以制备n-SnO2/p-Si异质结光电器件,该化学水浴法非常便宜和方便。采用XRD、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能,对SnO2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性。
中文关键词:SnO2薄膜,化学水浴法,异质结,I-V曲线
 
Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method
Abstract:The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The novel chemical bath method is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, XPS, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. Great photoelectric behavior was also obtained.
keywords:SnO2 film, chemical  bath method, heterojunction, current-voltage (I-V) characteristics
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