Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method
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Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,(2. The Key Laboratory for Ultrafine Materials of The Ministry of Education, East China University of Science and Technology,Instrumental Analysis and Research Center,Shanghai University,Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,Department of Physics, Shanghai University,Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai,Shanghai Weifu Instrument Technology Company Limited

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    Abstract:

    The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The self-made chemical bath system is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, SEM, XPS, PL, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. SnO2/p-Si heterojunction shows a prominent visible-light-driven photoelectrical performance under the low intensity light irradiation. Great photoelectric behavior was also obtained.

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HE Bo, XU Jing, NING Huan-Po, ZHAO Lei, XING Huai-Zhong, ZHANG Jian-Chen, QIN Yu-Ming, ZHANG Lei. Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method[J]. Journal of Infrared and Millimeter Waves,2017,36(2):139~143

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History
  • Received:July 15,2016
  • Revised:October 29,2016
  • Adopted:November 04,2016
  • Online: April 28,2017
  • Published: