(英)简单化学水浴法制备SnO2/p-Si异质结光电性能的研究
Received:July 15, 2016  Revised:October 29, 2016  点此下载全文
引用本文:何波,徐静,宁欢颇,赵磊,邢怀中,张磊.(英)简单化学水浴法制备SnO2/p-Si异质结光电性能的研究[J].Journal of Infrared and Millimeter Waves,2017,36(2):139~143
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Author NameAffiliationE-mail
Bo He Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai laserhebo@163.com 
Jing Xu Instrumental Analysis and Research Center,Shanghai University  
HuanPo Ning Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai  
Lei Zhao Department of Physics, Shanghai University  
HuaiZhong Xing Department of Applied Physics,Donghua University, Renmin Rd North,Songjiang District,Shanghai xinghz@dhu.edu.cn 
Lei Zhang Shanghai Weifu Instrument Technology Company Limited  
基金项目:上海市联盟计划项目(LM201601),超细材料制备与应用教育部重点实验室( 华东理工大学) 开放课题基金(15Q10932),中央高校基本科研业务费(东华大学,16D110916)
中文摘要:SnO2薄膜沉积在晶硅衬底上通过一种简单化学水浴法以制备n-SnO2/p-Si异质结光电器件,该化学水浴法非常便宜和方便。采用XRD、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能,对SnO2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性。
中文关键词:SnO2薄膜,化学水浴法,异质结,I-V曲线
 
Fabrication and photoelectrical properties of SnO2/p-Si heterojunction structure via a simple chemical bath deposition method
Abstract:The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate n-SnO2/p-Si heterojunction structure photoelectric device. The novel chemical bath method is very cheap and convenient. The structural, optical and electrical properies of the SnO2 film were studied by XRD, XPS, UV-VIS spectrophotometer and Hall effect measurement. The current-voltage (I-V) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail. Great photoelectric behavior was also obtained.
keywords:SnO2 film, chemical  bath method, heterojunction, current-voltage (I-V) characteristics
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