面向100GHz+数模混合电路的0.5μm InP DHBT工艺
Received:April 05, 2016  Revised:November 29, 2016  点此下载全文
引用本文:程伟.面向100GHz+数模混合电路的0.5μm InP DHBT工艺[J].Journal of Infrared and Millimeter Waves,2017,36(2):167~172
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Author NameAffiliationE-mail
CHENG Wei Nanjing Electronic Devices Institute dspbuilder@163.com 
中文摘要:本文报道了一种高性能的3英寸磷化铟双异质结双极型晶体管工艺。发射极尺寸为0.5×5μm2的磷化铟双异质结双极型晶体管,电流增益截止频率以及最高振荡频率分别达到350GHz以及532GHz,击穿电压4.8V。基于该工艺研制了114GHz静态分频器以及170GHz动态分频器两款工艺验证电路,这两款电路的工作频率处于国内领先水平。
中文关键词:磷化铟  双异质结晶体管  分频器
 
0.5μm InP DHBT Technology for 100GHz+ Mixed Signal Integrated Circuits
Abstract:A high performance 3 inch 0.5μm InP DHBT technology with three interconnect layers has been developed. The device epitaxial layer structure and geometry parameters were carefully studied to get the needed performance. The 0.5×5μm2 InP DHBTs demonstrated ft =350GHz, fmax=532GHz and BVCEO=4.8V, which have been modeled using Agilent-HBT large signal model. Static and dynamic frequency dividers designed and fabricated with this technology have demonstrated maximum clock frequencies of 114GHz and 170GHz, respectively. The ultra high speed 0.5μm InP DHBT technology offers a combination of ultra high speed and high breakdown voltage, makes it an ideal candidate for next generation 100GHz+ mixed signal integrated circuits.
keywords:InP, heterojunction bipolar transistor, frequency divider
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