A high performance 3 inch 0.5μm InP DHBT technology with three interconnect layers has been developed. The device epitaxial layer structure and geometry parameters were carefully studied to get the needed performance. The 0.5×5μm2 InP DHBTs demonstrated ft =350GHz, fmax=532GHz and BVCEO=4.8V, which have been modeled using Agilent-HBT large signal model. Static and dynamic frequency dividers designed and fabricated with this technology have demonstrated maximum clock frequencies of 114GHz and 170GHz, respectively. The ultra high speed 0.5μm InP DHBT technology offers a combination of ultra high speed and high breakdown voltage, makes it an ideal candidate for next generation 100GHz+ mixed signal integrated circuits.