含有超晶格电子势垒的In0.83Ga0.17As探测器暗电流仿真和验证
Received:March 08, 2016  Revised:September 29, 2016  点此下载全文
引用本文:李庆法,李雪,唐恒敬,邓双燕,曹高奇,邵秀梅,龚海梅.含有超晶格电子势垒的In0.83Ga0.17As探测器暗电流仿真和验证[J].Journal of Infrared and Millimeter Waves,2016,35(6):662~666
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Author NameAffiliationE-mail
LI Qing-Fa State Key Laboratory of Transducer Technolog, Shanghai Institute of Technical Physics, Chinese Academy of Sciences lqf1192008@163.com 
LI Xue State Key Laboratory of Transducer Technolog, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences lixue@mail.sitp.ac.cn 
TANG Heng-Jing Shanghai Institute of Technical Physics of the Chinese Academy of Sciences hjtang@mail.sitp.ac.cn 
DENG Shuang-Yan Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
CAO Gao-Qi Shanghai Institute of Technical Physics of the Chinese Academy of Sciences  
SHAO Xiu-Mei Shanghai Institute of Technical Physics of the Chinese Academy of Sciences shaoxm@mail.sitp.ac.cn 
GONG Hai-Mei Shanghai Institute of Technical Physics of the Chinese Academy of Sciences hmgong@mail.sitp.ac.cn 
基金项目:国家重点基础研究发展计划(973计划);国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:为了获得 In0.83Ga0.17As 探测器的暗电流机制, 采用了 TCAD 软件对吸收层中含有和不含有超晶格电子势垒的p-i-n结构探测器暗电流特性进行仿真,并开展了器件验证.结果表明, 超晶格势垒可以调整器件的能带结构, 改变载流子传输特性, 降低SRH复合, 从而降低器件的暗电流, 仿真结果与实验结果吻合.在此基础上, 分析了势垒位 置和周期变化对暗电流的影响, 提出了进一步降低器件暗电流的超晶格电子势垒优化结构.
中文关键词:In0.83Ga0.17As探测器  超晶格电子势垒  暗电流  TCAD仿真
 
Dark current simulation and verification of In0.83Ga0.17As detector with superlattice electron barrier
Abstract:To obtain the dark current mechanism of In0.83Ga0.17As detector, TCAD software was used to simulate its dark current property. The detectors include two structures with and without the super lattice (SL) electronic barrier in the InGaAs absorbed layer. At the same time, the detector has been fabricated to verify the simulation results. The results show that SL barrier can adjust the energy band structure and change the transport property of the carriers, and thus suppress the SRH recombination and decrease the dark current. Simulation results are in good agreement with experimental results. The influence of the location and periods of SL barrier on dark current was also simulated. The SL electronic barrier structure was optimized.
keywords:In0.83Ga0.17As detector, super lattice(SL) electronic barrier, dark current, TCAD simulation
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