fT/fmax>150/210 GHz AlGaN/GaN HFETs with regrown n+-GaN Ohmic contacts by MOCVD
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Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute,Hebei Semiconductor Research Institute

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    Abstract:

    Scaled AlGaN/GaN heterostructure field-effect transistors (HFETs) with a high unity current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) were fabricated and characterised on an SiC substrate. In the device, the source-to-drain distance (Lsd) was scaled to 600 nm using regrown n+-GaN Ohmic contacts. In addition, a 60-nm T-shaped gate was fabricated by self-aligned-gate technology. A recorded drain saturation current density (Ids) of 2.0 A/mm at Vgs=2 V and a peak extrinsic transconductance (gm) of 608 mS/mm were obtained in the scaled AlGaN/GaN HFETs. Moreover, in the devices with a 60-nm T-shaped gate, the maximum values of fT and fmax reached 152 and 219 GHz, respectively.

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LV Yuan-Jie, FENG Zhi-Hong, SONG Xu-Bo, ZHANG Zhi-Rong, TAN Xin, GUO Hong-Yu, FANG Yu-Long, ZHOU Xing-Ye, CAI Shu-Jun. fT/fmax>150/210 GHz AlGaN/GaN HFETs with regrown n+-GaN Ohmic contacts by MOCVD[J]. Journal of Infrared and Millimeter Waves,2016,35(5):534~538

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History
  • Received:January 02,2016
  • Revised:February 13,2016
  • Adopted:February 23,2016
  • Online: October 05,2016
  • Published: