Composition control of InAsxSb1-x grown by molecular beam epitaxy

doi:10.11972/j.issn.1001-9014.2016.04.001

Home > Archive>Volume 35, Issue 4, 2016 >386-388. DOI:10.11972/j.issn.1001-9014.2016.04.001

Composition control of InAsxSb1-x grown by molecular beam epitaxy
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                        10.11972/j.issn.1001-9014.2016.04.001
                    
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Affiliation:Institute of Physics, Chinese Academy of Sciences,Institute of Physics, Chinese Academy of Sciences
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Abstract:

The molecular beam epitaxy growth of InAsSb film is presented. Dependence of Sb compositions on Sb4 fluxes was studied. Utilizing the high combination tendency of In and Sb atoms, the composition of InAsSb layer is highly controlled.

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SUN Qing-Ling, WANG Lu, YAO Guan-Sheng, CAO Xian-Cun, WANG Wen-Qi, SUN Ling, WANG Wen-Xin, JIA Hai-Qiang, CHEN Hong. Composition control of InAsxSb1-x grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves,2016,35(4):386~388

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Received:October 09,2015
Revised:January 05,2016
Adopted:January 07,2016
Online: September 09,2016
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