Design and realization of THz InAlAs/InGaAs InP-based PHEMTs
Received:February 10, 2015  Revised:December 26, 2015  download
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Author NameAffiliationE-mail
WANG Zhi-Ming Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology wangzhiming872@163.com 
HUANG Hui National Institute of Metrology  
HU Zhi-Fu Hebei Semiconductor Research Institute  
ZHAO Zhuo-Bin Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology  
CUI Yu-Xing Hebei Semiconductor Research Institute  
SUN Xi-Guo Hebei Semiconductor Research Institute  
LI Liang Hebei Semiconductor Research Institute  
FU Xing-Chang Hebei Semiconductor Research Institute  
LYU Xin Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology  
Abstract:In this paper, 90-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors (PHEMTs) with well-balanced cut-off frequency ft and maximum oscillation frequency fmax are reported. This device with a gate-width of 2×25 μm shows excellent DC characteristics, including a maximum saturation current density Idss of 894 mA/mm, and a maximum extrinsic transconductance gm,max of 1640 mS/mm. The off-state breakdown voltage (BVoff-state) defined at a gate current of 1mA/mm is 3.3 V. The RF measurement is carried out covering the full frequency range from 1 to 110 GHz, an extrapolated ft of 252 GHz and fmax of 394 GHz are obtained, respectively. These results are obtained by the combination of gate size scaling, parasitics reduction and the on-wafer measurement in the full frequency band from 1 to 110 GHz.
keywords:InP, PHEMTs, InAlAs/InGaAs, on-wafer measurement, MMICs
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Copyright:《Journal of Infrared And Millimeter Waves》