| 甲烷流量对8.5代非晶硅光伏组件P层材料结构和光学性质的影响 |
| Received: March 03, 2011 Revised: July 03, 2011 点此下载全文 |
| 引用本文：窦亚楠,何悦,马晓光,乔琦,陈肖静,王永谦,陈绍斌,褚君浩.甲烷流量对8.5代非晶硅光伏组件P层材料结构和光学性质的影响[J].Journal of Infrared and Millimeter Waves,2012,31(1):5~10 |
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| Author | Institution | E-mail | | DOU Ya-Nan | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese | yndou@mail.sitp.ac.cn | | HE Yue | Suntech Power Co., Ltd. | | | MA Xiao-Guang | Suntech Power Co., Ltd. | | | QIAO Qi | Suntech Power Co., Ltd. | | | CHEN Xiao-Jing | Suntech Power Co., Ltd. | | | WANG Yong-Qian | Suntech Power Co., Ltd. | | | CHEN Robin | Suntech Power Co., Ltd. | | | CHU Jun-Hao | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese | |
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| 基金项目:国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 中文摘要:本文研究了甲烷流量对作为工业非晶硅光伏组件的p层材料—非晶碳化硅结构和光学性质的影响.p层非晶碳化硅薄膜采用硅烷和甲烷混合气体在射频等离子体增强化学气相沉积(RF-PECVD)设备中沉积制得，该设备是应用材料公司制造的尺寸为2.2 m × 2.6 m的8.5代系统.采用红外光谱和透射/反射谱分析与沉积工艺相关的键结构和光学性质.相同工艺条件下，当甲烷含量从3000 sccm增加到8850 sccm, p层非晶碳化硅薄膜的光学带隙逐步增加. p层非晶碳化硅薄膜的沉积速率随甲烷流量的增加而逐渐减小，其原因是硅烷-甲烷等离子体中SiH3粒子的减少.文中还通过在不同位置取样和分析沉积速率研究了大面积薄膜的均匀性. |
| 中文关键词:非晶碳化硅 红外光谱 均匀性 甲烷流量 |
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| Effect of CH4 flow rate on the optical properties of Boron-doped a-SiC:H films |
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| Abstract:The effect of CH4 flow rate on the structural and optical properties of boron-doped amorphous silicon carbon films as window p-layer in the industrial hydrogenated amorphous silicon solar module was investigated. The p-layer amorphous hydrogenated silicon carbon films were deposited from SiH4-CH4 gas mixtures in the Applied Materials SUNFAB radio frequency-plasma enhanced chemical vapor deposition Gen8.5 system with dimensions of 2.2 m 2.6 m. Infrared and transmittance/reflectance spectra were employed to analyze the bond configurations and optical properties of the films associating with structures of the p-layer films which are sensitive to the deposition condition. The optical band gap of the p-layer films increased as the CH4 flow rate ranged from 3000 sccm to 8850 sccm with other deposition conditions unchanged. With increasing CH4 flow rate, the deposition rate of p-layer amorphous silicon carbon films decreased slowly, because of the reduction of SiH3 radical in the SiH4-CH4 plasmas. The uniformity of the hydrogenated amorphous silicon carbon films was also investigated, by sampling and analyzing the deposition rate on four different locations of the large area films. |
| keywords:a-SiC:H infrared spectrum uniformity CH4 flow rate |
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