Nd掺杂对BiFeO3薄膜微结构和电学性能的影响
Received: October 28, 2010  Revised: November 08, 2010  点此下载全文
引用本文：高成,杨静,孟祥建,白伟,林铁,孙璟兰,褚君浩.Nd掺杂对BiFeO3薄膜微结构和电学性能的影响[J].Journal of Infrared and Millimeter Waves,2012,31(1):21~25
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AuthorInstitutionE-mail
GAO Cheng National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of gc781225@163.com 
YANG Jing Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai  
MENG Xiang-Jian National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of  
BAI Wei Key Laboratory for Polar Materials and Devices of Ministry of Education, East China Normal University  
LIN Tie National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of  
SUN Jing-Lan National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of  
CHU Jun-Hao National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of  
基金项目:国家自然科学基金项目（面上项目，重点项目，重大项目）
中文摘要:采用化学溶液方法，在LaNiO3/Si(100)衬底上生长了Nd掺杂的BiFeO3薄膜.XRD分析结果表明，随着Nd掺杂量的增加，薄膜晶格变小，Nd掺杂量为20%时，薄膜出现杂相.介电测试表明，随着Nd掺杂量的增加，介电常数和损耗减小，Nd掺杂量为2％的薄膜表现出很强的介电色散现象并出现介电损耗弛豫峰，其符合类德拜模型特征.随着Nd掺杂量增加，薄膜的漏电流减小，在低电场下，电流输运遵从SCLC模型，在高场下，电流输运遵循Poole-Frenkel模型.分析结果表明Nd掺杂对薄膜微结构和电学性能有显著影响.
中文关键词:Nd掺杂  BFO薄膜  介电性能  漏电流
 
The effect of Nd doping on microstructure and electrical properties of BiFeO3 thin films
Abstract:The Nd doped BiFeO3 thin films are prepared on LaNiO3/Si (100) substrate by chemical solution deposition method. The results of x-ray diffraction show that the lattice constant of thin films decreases with the increase of Nd content. The impurity phases are found in the thin film with 20% Nd content. The results of dielectric measurement indicate that the dielectric constant and loss of thin films decrease with the increase of Nd content. A very strong dielectric frequency dispersion and relaxation of dielectric loss peak occurs in the thin film with 2% Nd content and it follows Debye-like law. The leakage current of thin films decreases with the increase of Nd content. The current transport follows SCLC model in low electric field region and follows Poole-Frenkel model in high electric field region. These results suggest that Nd doping has a strong influence on microstructure and electric properties of BiFeO3 thin films.
keywords:Nd doping  BFO thin films  dielectric property  leakage current
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