Abstract:从理论和实验上研究了77K和300K温度下,本征型半导体InSb,Hg_(1-x)Cd_xTe,Hg_(1-x)Mn_xTe和高掺杂Hg_(1-x)Cd_xTe在2.5～50μm波段范围内的自由载流子吸收,结果表明:对于所研究的三种本征型样品,均是极性光学声子散射起主要作用,对于InSb还应考虑声学声子和电离杂质散射。对有缺陷的Hg_(1-x)Mn_xTe样品,理论计算的自由载流子吸收系数与实验值不一致,表明存在附加的散射机制,对高掺杂Hg_(1-x)Cd_xTe的研究证实了这一假设。还讨论了非弹性电子-声子散射机制的起因,估算了特性参数。

Abstract:Recent studios of the molecule adsorption on metal surfaces by using photoacoustic spectroscopy have been reported. The superior chatacteristics of PAS have been demonstrated by the following results: the vibrational spectra for studying physisorption under high exposure pressure; the adsorption mechanism of multilayer growth measured by phase discriminated spectra and the precursor adsorption kinetics analyzed by the adsorption isotherm.

Abstract:SiC_xN_y: H thin films with continuously variable compositions have been preparedby using the plasma-enhanced chemical vapor-deposition (PECVD) method. The composition of the films is analyzed by using FTIR and AES. The experimental results show that the ratio of N/(N+C)in the SiC_xN_y: H films can be obtained rapidly from the FTIR absorption spectrum. Analyses of films thermally annealed rapidly by using FTIR indicate that the passivated films, which have been prepared by PECVD, have good thermal stabilities.

Abstract:用反射消光式椭圆偏振光谱研究了射频溅射法制备的不同衬底温度和不同掺钇浓度下的α-Si:H(Y)膜在可见光区的光学性质,结果与透射谱一致。由红外吸收谱判断膜中氢含量和存在形式随生长条件和掺钇浓度变化。

Abstract:报道了组分y=0.76和0.84的晶格匹配In_(1-x)Ga_xAs_yP_(1-y)/InP多量子阱的子能带结构低温光调制反射光谱研究结果,在0.9～1.5eV光子能量范围观察到限制的电子与空穴子带间的激子跃迁,还观察到限制的电子子带与空穴连续态间的跃迁,由此比较直接地确定了价带的不连续量,得到不连续因子Q_v=0.65±0.02。

Abstract:采用金刚石对顶砧高压装置测量了半磁半导体Cd_(0.95)Fe_(0.05)Te光吸收边的压力效应,得到其一级和二级压力系数分别为α=8.2×10~(-11)eV/Pa和β=-7.7×10~(-21)eV/Pa~2;测量了不同温度下的Cd_(0.95)Fe_(0.05)Te吸收谱,得到其能隙温度系数为α=-4.4×10~(-4)eV/K。此外,在低温下发现了一个Fe~(2+)吸收峰,根据晶体场理论判定为Fe~(2+)的~5E→~3T_1跃迁吸收峰。

Abstract:The integration modulation transfer function MTF_I and the transfer modulation transfer funetion MTF_T of the CCLID in whiskbroom scanning are strictly analyzed, while the expressions of the MTF_I and MTF_T are derived. Their values are discussed and the engineering estimation of them is made finalty.

Abstract:The defect revealabilities of plastic, silica and manganese steel are calculated by the equations of the two-dimensional heat conduction. The defect revealabilities versus delay time, defect size and depth are analyzed.

Abstract:A new pyroelectric phenomenon is presented. Furthermore, its principle is qualitatively desoribed. Some experimental results of current pulsation of gas disoharge and voltage variation due to pyroelectricity under room temperature condition are given.

Abstract:The thermal effect of the refractive index for thallous halide crystals is studied. The result shows that the contribution of the variation of band width due to the change of lattice constant is important for the temperature coefficient of thallous halide crystals and is negative. The temperature coefficients of TlCl, TlBr, KRS-5 and KRS-6 have been calculated. They are in agreement with the experimental results.

Abstract:The enhanced infrared photorefractive effect in cubic crystal GaAs under externally applied electric field is described. The spatial amplitude and phase variations of space charge electric field in the two-beam coupling process are emphatically analyzed, which quite well explain the results of experimental measurement

Abstract:Based on the electromagnetic theory and quantum mechanics, this paper analyzes the relationship between microstructure of materials and infrared radiation. Some effective approaehes to develop high quality infrared radiation materials have been obtained experimentally.