红外与毫米波学报
1001-9014
2013
32
4
304
308
article
绝缘层上应变SiGe沟道p-MOSFET电学特性模拟分析
Simulation analysis of electrical characteristics of strained SiGe channel-on-insulator p-MOSFET
利用数值模拟软件ISE TCAD对绝缘层上应变SiGe(SGOI)和Si(SOI)p-MOSFET的电学特性进行了二维数值模拟.计算结果表明，与传统的SOI p-MOSFET相比，SGOI p-MOSFET的漏源饱和电流几乎要高出两倍; 其亚阈值电流要高出1～3个数量级.Ge合金组分作为应变SiGe沟道MOSFET的重要参数，就不同Ge合金组分对SGOI p-MOSFET的电学特性的影响也进行了较为深入的研究.随着Ge合金组分的增大，SGOI p-MOSFET的总体电学性能有所提高.
In this paper, the strained SiGe-on-Insulator (SGOI) p-MOSFET and Si-on-Insulator (SOI) p-MOSFET are respectively studied via 2-D numerical simulation by ISE TCAD software. The results indicate that compared with the conventional SOI p-MOSFET, the drain-source saturation current of SGOI p-MOSFET almost more than twice, the sub-threshold current of SGOI p-MOSFET has 1～3 orders of magnitude higher than that of SOI p-MOSFET. Because Ge alloy mole fraction is an important basic parameter to the strained SiGe channel MOSFET, the effect of Ge alloy mole fraction on the electrical characteristics of the SGOI p-MOSFET is in depth study in this paper. With the increasing of Ge alloy mole fraction, the overall electrical properties of SGOI p-MOSFET are improved.The strained SiGe-on-Insulator (SGOI) p-MOSFET and Si-on-Insulator (SOI) p-MOSFET were studied via 2-D numerical simulation by ISE TCAD software, respectively. The results indicate that the drain-source saturation current of SGOI p-MOSFET is almost more than twice that of conventional SOI p-MOSFET. The sub-threshold current of SGOI p-MOSFET is 1～3 orders of magnitude higher than that of SOI p-MOSFET. Because Ge alloy mole fraction is an important parameter for the strained SiGe channel MOSFET, its effect on the electrical characteristics of the SGOI p-MOSFET was studied in detail. With the increasing of Ge alloy mole fraction, the overall electrical properties of SGOI p-MOSFET were improved.
SGOI；p-MOSFET；Ge合金组分
SGOI, p-MOSFET, Ge alloy mole fraction
于 杰,王 茺,杨 洲,陈效双,杨 宇
YU Jie,WANG Chong,YANG Zhou,CHEN Xiao-Shuang and YANG Yu
云南大学,云南大学,云南大学,中国科学院上海技术物理研究所,云南大学
Institute for Optoelectronic Information Materials,Yunnan University,Institute for Optoelectronic Information Materials,Yunnan University,Institute for Optoelectronic Information Materials,Yunnan University,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Institute for Optoelectronic Information Materials,Yunnan University
hwyhmben/article/abstract/120539