In the realm of near-infrared spectroscopy， the detection of molecules has been achieved using on-chip waveguides and resonators. In the mid-infrared band， the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors. In this study， we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector. The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling， facilitating efficient and high-quality detection of mid-infrared light with minimal loss. We conducted a simulation to analyze the photoelectric characteristics of the device. Additionally， we investigated the factors that affect the integration of the InAs/GaAsSb superlattice photodetector and the GaAsSb waveguide. Optimal thicknesses and lengths for the absorption layer are determined. When the absorption layer has a thickness of 0.3 μm and a length of 50 μm， the noise equivalent power reaches its minimum value， and the quantum efficiency can achieve a value of 68.9%. The utilization of waveguide detectors constructed with III-V materials offers a more convenient means of integrating mid-infrared light sources and achieving photoelectric detection chips.