HUO Qin
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaHAN Hong-Qiang
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaZHANG Cheng
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaJIAO Cui-Ling
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaWANG Reng
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaMAO Cheng-Ming
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaLU Ye
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaCHEN Xin-Tian
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaQIAO Hui
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaLI Xiang-Yang
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaShanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
TN213
Supported by the National Natural Science Foundation of China (12227901)
HUO Qin, HAN Hong-Qiang, ZHANG Cheng, JIAO Cui-Ling, WANG Reng, MAO Cheng-Ming, LU Ye, CHEN Xin-Tian, QIAO Hui, LI Xiang-Yang. Improved liquid phase epitaxy method for in-situ growth of HgCdTe with positive composition gradient[J]. Journal of Infrared and Millimeter Waves,2024,43(3):307~315
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