The demand for high-speed response mid-wave infrared （MWIR） photodetectors （PDs） is gradually increasing in emerging fields such as free-space optical communication and frequency comb spectroscopy. The XB_nn barrier infrared photodetectors greatly suppress shot noise originated from the device dark current. In this work， InAsSb/AlAsSb/AlSb-based nBn and pBn barrier MWIR PDs were grown on GaSb substrates using molecular beam epitaxy （MBE）. The GSG PDs were fabricated to realize the radio frequency （RF） response testing. X-ray diffraction （XRD） and atomic force microscopy （AFM） results indicate that both epitaxial structures exhibit good crystal quality. The 90 μm diameter pBn PDs exhibit a lower dark current density of 0.145 A/cm2 compared to the nBn PDs operating at room temperature （RT） and a reverse bias of 400 mV， which indicates the uncooled barrier PDs perform with low noise. Capacitance tests reveal that the pBn PDs， operating at zero bias， show a fully depleted barrier layer and partially depleted absorption region， while the nBn absorption region also exhibits partial depletion. RF response characterization demonstrates that the 90 μm diameter pBn PDs achieve 3 dB bandwidth of 2.62 GHz at room temperature and under a 3 V reverse bias， which represents a 29.7% improvement over the corresponding nBn PDs， only achieving 3 dB bandwidth of 2.02 GHz. This signifies a preliminary achievement of uncooled barrier MWIR PDs capable of fast detection.