Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes
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Affiliation:

1.School of Materials and Chemistry, the University of Shanghai for Science and Technology, Shanghai 200093, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.University of Chinese Academy of Sciences, Beijing 100049, China;4.Key Laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;5.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

Clc Number:

TN312+.7

Fund Project:

Supported by the National Natural Science Foundation of China (NSFC) (62174166, 11991063, U2241219), Shanghai Municipal Science and Technology Major Project (2019SHZDZX01, 22JC1402902), and the Strategic Priority Research Program of Chinese Academy of Sciences( XDB43010200).

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    Abstract:

    InGaAsP/InP single-photon avalanche diodes (SPADs) were gamma-irradiated with total doses of 10 krad (Si) and 20 krad (Si) and tested in situ and shift methods. After irradiation, the dark currents and dark count rates were degraded slightly, whereas the photon detection efficiency and the after pulse probability were basically unchanged. After a certain period of annealing at room temperature, these degradations were essentially recovered, indicating that transient ionization damage dominated in the gamma irradiation of InGaAsP/InP single-photon avalanche diodes.

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SUN Jing-Hua, WANG Wen-Juan, ZHU Yi-Cheng, GUO Zi-Lu, QI Yu-Fei, XU Wei-Ming. Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes[J]. Journal of Infrared and Millimeter Waves,2024,43(1):44~51

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History
  • Received:March 31,2023
  • Revised:November 29,2023
  • Adopted:April 18,2023
  • Online: November 27,2023
  • Published: