1.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3.University of Shanghai for Science and Technology, Shanghai 200093, China;4.School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology,Shanghai 200093, China;5.University of Chinese Academy of Sciences, Beijing 100049, China
TN312+.7
Supported by the National Natural Science Foundation of China (NSFC) (62174166, 11991063, U2241219), Shanghai Municipal Science and Technology Major Project (2019SHZDZX01, 22JC1402902), and the Strategic Priority Research Program of Chinese Academy of Sciences( XDB43010200).
QI Yu-Fei, WANG Wen-Juan, SUN Jing-Hua, WU Wen, LIANG Yan, QU Hui-Dan, ZHOU Min, LU Wei. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves,2024,43(1):1~6
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