1.Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China;2.Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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This work is supported by the National Natural Science Foundation of China (61574011, 60908012, 61575008, 61775007, 61731019, 61874145, 62074011, 62134008), the Beijing Natural Science Foundation (4182015, 4172011, 4202010) and Beijing Nova Program (Z201100006820096) and International Student related expenses-Department of Information(040000513303).
WANG Bing-Hui, XING Yan-Hui, HE Wen-Xin, GUAN Bao-Lu, HAN Jun, DONG Sheng-Yuan, LI Jia-Hao, FANG Pei-Jing, HAN Zi-Shuo, ZHANG Bao-Shun, ZENG Zhong-Ming. High performance and broadband photodetectors based on SnS2/InSe heterojunction[J]. Journal of Infrared and Millimeter Waves,2023,42(5):659~665
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