High performance and broadband photodetectors based on SnS2/InSe heterojunction
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1.Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China;2.Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Clc Number:

TN214

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This work is supported by the National Natural Science Foundation of China (61574011, 60908012, 61575008, 61775007, 61731019, 61874145, 62074011, 62134008), the Beijing Natural Science Foundation (4182015, 4172011, 4202010) and Beijing Nova Program (Z201100006820096) and International Student related expenses-Department of Information(040000513303).

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    Abstract:

    We reported a broadband photodetector with a spectral range of 365-965 nm, based on a SnS2/InSe vertical heterojunction. In this device, InSe serves as the optical absorption layer, effectively extending the spectral range, while SnS2 functions as the transmission layer, forming a heterojunction with InSe to facilitate separation of electron-hole pairs and enhance the responsivity. The photodetector exhibits a responsivity of 813 A/W under 365 nm. Moreover, it still maintained a high responsivity of 371 A/W, an external quantum efficiency of 1.3 × 105%, a specific detectivity of 3.17 × 1012 Jones, and a response time of 27 ms under 965 nm illumination. The above investigation provides a new approach for broadband photodetectors with high responsivity.

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WANG Bing-Hui, XING Yan-Hui, HE Wen-Xin, GUAN Bao-Lu, HAN Jun, DONG Sheng-Yuan, LI Jia-Hao, FANG Pei-Jing, HAN Zi-Shuo, ZHANG Bao-Shun, ZENG Zhong-Ming. High performance and broadband photodetectors based on SnS2/InSe heterojunction[J]. Journal of Infrared and Millimeter Waves,2023,42(5):659~665

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History
  • Received:March 03,2023
  • Revised:August 09,2023
  • Adopted:April 17,2023
  • Online: August 07,2023
  • Published:
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