InAs DWELL quantum dot lasers were grown on GaAs（100） substrate by molecular beam epitaxy technology. The effect of Be doping in active regions on the performance of InAs quantum dot lasers has been studied. The results show that Be-doped in the active region could effectively reduce the threshold current density， improve the output power， and increase the temperature stability of the InAs quantum dot laser.The threshold current of Be-doped InAs quantum dot laser was reduced to 12 mA， and the corresponding threshold current density was 100 A/cm². The highest output power of the laser was 183 mW， and the highest operating temperature reached 130 ℃. This is of great significance for the application of InAs quantum dot laser device in the optical communication system.