Failure modes and analysis for HgCdTe linear photoconductive detectors
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Affiliation:

Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China

Clc Number:

TN215

Fund Project:

Supported by the Shanghai Sailing Program(19YF1454800)

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    Abstract:

    Failure modes during screening tests and application processes have been summed up for HgCdTe linear photoconductive detectors which have been applied in several programs. The mechanisms behand these failure modes have been analyzed based on the combination of HgCdTe material parameters, device structure dimensions, detector physics, fabrication processes and device test techniques. Criteria of failure modes have been firstly proposed for deeper understanding of HgCdTe linear photoconductive detector and better optimization of detector screening process, which are also helpful for the analysis and resolution of problems encountered in the application of HgCdTe linear photoconductive detectors.

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QIAO Hui, WANG Ni-Li, LAN Tian-Yi, ZHAO Shui-Ping, TIAN Qi-Zhi, LU Ye, WANG Reng, HUO Qin, SHI Fan, TANG Yi-Dan, CHU Kai-Hui, JIA Jia, ZHOU Qing, SUN Xiao-Yu, JIANG Pei-Lu, LUO Yi, CHENG Xin-Yi, LI Xiang-Yang. Failure modes and analysis for HgCdTe linear photoconductive detectors[J]. Journal of Infrared and Millimeter Waves,2022,41(6):1009~1021

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History
  • Received:May 30,2022
  • Revised:November 16,2022
  • Adopted:August 08,2022
  • Online: November 15,2022
  • Published: