1.Institute of Applied Electronics, CAEP, Mianyang 621900, China;2.The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China
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Supported by National Natural Science Foundation of China (11804322), the Innovation and Development Fund of CAEP (C-2020-CX2019035)
ZHOU Kun, HE Lin-An, LI Yi, HE Yu-Wen, ZHANG Liang, HU Yao, LIU Sheng-Zhe, YANG Xin, DU Wei-Chuan, GAO Song-Xin, TANG Chun. High power 793 nm diode lasers[J]. Journal of Infrared and Millimeter Waves,2022,41(4):685~689
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