High power 793 nm diode lasers
Author:
Affiliation:

1.Institute of Applied Electronics, CAEP, Mianyang 621900, China;2.The Key Laboratory of Science and Technology on High Energy Laser, CAEP, Mianyang 621900, China

Clc Number:

O436

Fund Project:

Supported by National Natural Science Foundation of China (11804322), the Innovation and Development Fund of CAEP (C-2020-CX2019035)

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    Abstract:

    To satisfy the need of Thulium-doped fiber laser pump source, 793 nm high-power semiconductor laser emitters and fiber-coupled module were developed. The laser epitaxy adopts the large asymmetric optical cavity waveguide structure to reduce the mode loss. The waveguide adopts aluminum free GaInP material which improves the facet damaged threshold combined with vacuum cleavage passivation process. Through the optimization of epitaxial structure and facet coating, the output power of the developed laser reaches 12 W@11A, passed the 300 h aging test of 8 W. Seven single emitters were space coupled to 100 μ m 0.22 NA fiber modules. The output power of the model is 40 W@7A, and the electro-optical efficiency is 49.5% @ 40 W.

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ZHOU Kun, HE Lin-An, LI Yi, HE Yu-Wen, ZHANG Liang, HU Yao, LIU Sheng-Zhe, YANG Xin, DU Wei-Chuan, GAO Song-Xin, TANG Chun. High power 793 nm diode lasers[J]. Journal of Infrared and Millimeter Waves,2022,41(4):685~689

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History
  • Received:January 21,2022
  • Revised:August 17,2022
  • Adopted:February 17,2022
  • Online: August 10,2022
  • Published: