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Home > Archive>Volume 41, Issue 4, 2022 >726-732. DOI:10.11972/j.issn.1001-9014.2022.04.011
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Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials
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1.Key Laboratory of Terahertz Solid State Technology， Shanghai Institute of Microsystem and Information Technology， Chinese Academy of Sciences， Shanghai 200050， China;2.Center of Materials Science and Optoelectronics Engineering， University of Chinese Academy of Sciences， Beijing 100049， China;3.College of Physics and Electronic Engineering， Hainan Normal University， Haikou 571158，China

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O78

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Supported by National Natural Science Foundation of China（61434006）

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    Abstract:

    This paper reports the material characteristics of In0.66Ga0.34As/InyAl1-yAs high electron mobility transistor （HEMT）. The linearly graded InyAl1-yAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy （GSMBE）. The influence of InyAl1-yAs graded buffer layer with different thickness and different indium contents on the surface quality， the electron mobility and the concentrations of two-dimensional electron gas （2DEG） was studied. It was found that the electron mobility and concentration at 300 K （77 K） were 8570 cm2/（Vs）-1 （23200 cm2/（Vs）-1） and 3.255×1012 cm-2 （2.732×1012 cm-2）. The surface morphology of the material was also well improved and the root mean square （RMS） was 0.154 nm when the InAlAs graded buffer layer thickness was 50 nm. And this study can provide strong support for the improvement of HEMT performance.

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TIAN Fang-Kun, AI Li-Kun, SUN Guo-Yu, XU An-Huai, HUANG Hua, GONG Qian, QI Ming. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials[J]. Journal of Infrared and Millimeter Waves,2022,41(4):726~732

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History
  • Received:November 18,2021
  • Revised:August 11,2022
  • Adopted:January 10,2022
  • Online: August 10,2022
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