Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors
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Affiliation:

1.Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2.Hangzhou Insitute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

Clc Number:

O471.5;TN305.3

Fund Project:

Supported by Youth Innovation Promotion Association CAS

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    Abstract:

    In this paper, 2-D numerical simulation was used to simulate the structure of MWIR HgCdTe APD, and the structural parameters of APD devices at 80K were obtained by comparing with the experimental results. At the same time, the influence of dark current mechanism on APD devices at different operating temperatures was studied. The performance of APD devices with the change of each parameter under the condition of high operating temperature was studied. We proposed the optimal HgCdTe APD structure for achieving high performance at 150K. The structure provides an important reference for the subsequent development of APD devices with high operating temperature.

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SHEN Chuan, YANG Liao, GUO Hui-Jun, YANG Dan, CHEN Lu, HE Li. Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors[J]. Journal of Infrared and Millimeter Waves,2021,40(5):576~581

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History
  • Received:November 04,2020
  • Revised:September 03,2021
  • Adopted:December 16,2020
  • Online: September 03,2021
  • Published: