3- mid-infrared polarization-independent and CMOS-compatible graphene modulator
Author:
Affiliation:

1.State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China;2.Chongqing United Microelectronics Center, Chongqing 401332, China

Clc Number:

O43

Fund Project:

Supported by the National Key Research and Development Program of China(2018YFE0201901);the Program for International S&T Cooperation Projects of Sichuan Province(2020YFH0108); the National Nature Science Foundation of China (61435010, 61307070, 61421002, 61704021); the Fundamental Research Funds for the Central Universities (ZYGX2019J046).

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    Abstract:

    This paper proposes a 3- mid-infrared band polarization-independent and CMOS-compatible graphene modulator, which mainly includes two parts: the mode conversion structure and the graphene modulator. This modulator not only fulfills the requirement of compatibility with CMOS, but also can achieve polarization-independent modulation of the fundamental mode. Simulation results show that this modulator can achieve an extinction ratio(ER) higher than 20 dB in the mid-infrared band from 2.95 to 3.05 , the insert loss for both TE and TM modes are less than 1.3 dB, and polarization-dependent loss is less than 1.09 dB. Through the calculation, the 3 dB bandwidth up to 9.47 GHz can be obtained when the length of the device is 420 .

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LU Rong-Guo, LIN Rui, SHEN Li-Ming, CAI Song-Wei, WANG Yu-Jiao, CHEN Jin-Zhan, YANG Zhong-Hua, LYU Jiang-Bo, ZHOU Yong, WANG Xiao-Ju, LIU Yong.3- mid-infrared polarization-independent and CMOS-compatible graphene modulator[J]. Journal of Infrared and Millimeter Waves,2021,40(3):297~301

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History
  • Received:July 28,2020
  • Revised:April 29,2021
  • Adopted:September 04,2020
  • Online: April 27,2021
  • Published: June 25,2021