HIGH CURRENT,MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f_t OF 176GHz
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JIN Zhi, CHENG Wei, LIU Xin-Yu, XU An-Huai, QI Ming. HIGH CURRENT, MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f_t OF 176GHz[J]. Journal of Infrared and Millimeter Waves,2009,28(2):