STUDY ON THRESHOLD OF LASER DAMAGE TO CCD AND CMOS IMAGE SENSORS
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TN958.98

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    Abstract:

    Theoretical analyses and experimental research were done on the laser-induced interference and damage to CCD and CMOS image sensors.The 1064nm laser interference threshold,damage threshold and completely destroy threshold of CCD and CMOS image sensors were measured under atmospheric pressure condition and vacuum condition respectively.Experimental results show that the three aforementioned thresholds of CCD or CMOS sensors have no obvious differences under the two different pressure conditions.Experimental results also reveal that,compared to CMOS image sensors,CCD image sensors are easier to be interfered or damaged or even destroyed,while CMOS sensors have a better anti-jamming and anti-injury ability under each of the two conditions.

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LIN Jun-Yang, SHU Rong, HUANG Geng-Hua, FANG Kang-Mei, YAN Zhi-Xin. STUDY ON THRESHOLD OF LASER DAMAGE TO CCD AND CMOS IMAGE SENSORS[J]. Journal of Infrared and Millimeter Waves,2008,27(6):

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