PARAMETERS EXTRACTION FROM THE DARK CURRENT CHARACTERISTICS OF LONG-WAVELENGTH HgCdTe PHOTODIODE
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Abstract:
An data-processing method was developed to obtain the device parameters from the resistance-voltage(R-V) characteristics measured in long-wavelength HgCdTe photodiode.This curve-fitting model includes the diffusion,generation-recombination,trap-assisted tunneling,and band-to-band tunneling current as dark current mechanisms.The fitting procedure was presented in details and the extents of the fitting errors were discussed.By fitting the R-V characteristics of a real device,the applicability of our method has been proved for obtaining the basic parameters of devices.
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QUAN Zhi-Jue, LI Zhi-Feng, HU Wei-Da, YE Zheng-Hua, LU Wei. PARAMETERS EXTRACTION FROM THE DARK CURRENT CHARACTERISTICS OF LONG-WAVELENGTH HgCdTe PHOTODIODE[J]. Journal of Infrared and Millimeter Waves,2007,26(2):92~96