BEHAVIOR OF Si INCORPORATION IN AlxGa1-xAs (x=0 TO 1) GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

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BEHAVIOR OF Si INCORPORATION IN AlxGa1-xAs (x=0 TO 1) GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY
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LI Hua, LI Ai-Zhen, ZHANG Yong-Gang, QI Ming. BEHAVIOR OF Si INCORPORATION IN AlxGa1-xAs (x=0 TO 1) GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY[J]. Journal of Infrared and Millimeter Waves,2007,26(1):1~

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Received:July 31,2006
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