STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD
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Abstract:
The zero-bias resistance area product (R 0A) and the saturation current density J 0 are both key parameters to give an indication of photodiode performance. In this study, an effectual experimental method to study the minority carrier diffusion characteristics of Hg ~1-xCd xTe photodiodes was presented. By I-V tests in a variational magnetic field B, R 0A and J 0 measurements were carried out as a function of B in the alloy composition range 0.5
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JIA Jia, CHEN Xin-Yu, LI Xiang-Yang, GONG Hai-Mei. STUDY ON THE MINORITY CARRIER DIFFUSION CHARACTERISTIC OF HgCdTe DIODES BY I-V MEASUREMENT IN A VARIATIONAL MAGNETIC FIELD[J]. Journal of Infrared and Millimeter Waves,2005,24(2):140~142