High quality SrBi 2Ta 2O 9 (SBT) ferroelectric thin films were fabricated on platinized silicon substrate by PLD. Electronic transport properties of SrBi 2Ta 2O 9 ferroelectric thin films in temperature range of 10 to 300K were studied. The conduction mechanisms in the thin films were analyzed. The results indicate the existence of two conduction mechanisms in SBT ferroelectric thin films. Due to the SBT layered structure, the carrier transport can be divided into two parts: internal transport, which is between the (Bi 2O 2) 2+ layers, and external transport, which is across the (Bi 2O 2) 2+ layers. Especially, behavior of electric transport of the polaron as an internal transport carrier is first observed in the SrBi 2Ta 2O 9 ferroelectric thin films. Activation energy of the internal transport carriers is E a ~ 0.0556 eV. The results can be helpful in understanding the low DC leakage in SBT films at room temperature.