The results of the HgCdTe p + on n long wavelength hetero junction infrared focal plane arrays were presented. HgCdTe p + on n hetero junction material was grown by molecular beam epitaxy(MBE) and in situ doping, and HgCdTe p + on n hetero junction infrared focal plane arrays were fabricated by the process of wet etching, side wall passivation, side wall matelization, indium bump fabrication and hybridization etc. According to the I V experiments and the dark current mechanism, the effect of all kinds of dark current was calculated and analyzed. The spectral response and detectivity of the device were also measured.
YE Zhen Hua, WU Jun, HU Xiao Ning, WU Yan, WANG Jian Xin, LI Yan Jin, HE Li. STUDY OF HgCdTe p+-on-n LONG-WAVELENGTH HETERO-JUNCTION DETECTOR[J]. Journal of Infrared and Millimeter Waves,2004,23(6):423~426Copy