INTERSUBBAND RELAXATION IN InGaAS/Geds AND InGaAS/AIGaAS STRAINED-LAYER QUANTUM WELLS
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Abstract:
The dynamics of the intersubband relaxation of carriers in the InGaAs/GaAs and InGaAs/AIGaAs quantum wells with different well-widths was investigated with the use of time-resolved spectroscopy in the temperature range from 11 to 90K.The different scattering mechanisms,which are dominant in the carriers relaxation processes in the quantum wells of the two systems were discussed.
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Jin Shirong, Luo Jinsheng, Chu Junhao. INTERSUBBAND RELAXATION IN InGaAS/Geds AND InGaAS/AIGaAS STRAINED-LAYER QUANTUM WELLS[J]. Journal of Infrared and Millimeter Waves,1995,14(3):237~240