IMPURITY INFLUENCE ON THE PHOTOLUMINESCENCE FROM SiGe/Si QUANTUM WELL STRUCTURES
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Abstract:
Deep level impurities in the background were found to be vital for the luminescence of QW,grown by solid source Si MBE.The samples grown on undoped and heavily doped substrates,i.e.Sb-doped in QW and B-doped in cap layers were studied.Impurity contamination causes deep levels,which severely reduces radiative efficiency of SiGe/Si QWs.
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Yang Yu, Liu Xiaohan, Lu Xuekun, Huang Daming, Jiang Zuimin, Gong Dawei, Wang Xun. IMPURITY INFLUENCE ON THE PHOTOLUMINESCENCE FROM SiGe/Si QUANTUM WELL STRUCTURES[J]. Journal of Infrared and Millimeter Waves,1995,14(3):175~181