TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN GaAS/AlGaAS ASYMMETRIC COUPLED DOUBLE QUANTUM WELLS STRUVTURE
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TN304.01

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    Abstract:

    Photoluminescence spectra at various temperatures of GaAs/AlGaAs asymmetric coupled double quantum wells pin structure are reported. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow-and wide-well was observed.The results show that the thermionic emission of the electrons in the narrow-well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intellsity in the wide-well and its mechanism were studied, too.

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Xu Shijie, Liu Jian, Li Guohua, Zheng Houzhi, Jiang Desheng. TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN GaAS/AlGaAS ASYMMETRIC COUPLED DOUBLE QUANTUM WELLS STRUVTURE[J]. Journal of Infrared and Millimeter Waves,1994,13(1):77~80

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