USE OF PHOTOREFLECTANCE SPECTROSCOPY IN THE STUDY OF GaAs_(1-x)Sb_x/GaAs EPITAXIAL LAYER
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Abstract:
Photoreflectance (PR) lineshapo of quantum wells is discussed simply. The MBE GaAs_(1-x)Sb_x/GaAs hotorostructures and strained layer multiple quantum wells have been investigated by means of PR measurement. The advantages of the photoreflectance spectroscopy in the study of MBE epitaxial film are found in this paper.
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CHI JIANGANG ZHAO WENQIN LI AIZHEN. USE OF PHOTOREFLECTANCE SPECTROSCOPY IN THE STUDY OF GaAs_(1-x)Sb_x/GaAs EPITAXIAL LAYER[J]. Journal of Infrared and Millimeter Waves,1991,10(2):107~112