25-channel 200 GHz AWG based on SOI ridge waveguides
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State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Institute of Semiconductors, Chinese Academy of Science,Institute of Semiconductors, Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Institute of Semiconductors, Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Institute of Semiconductors, Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences,Institute of Semiconductors, Chinese Academy of Science

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Fund Project:

National Key R&D Program of China (2016YFB0402504), and National Nature Science Foundation of China (61435013)

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    Abstract:

    A SOI-based 25-channel AWG with 200 GHz channel spacing is demonstrated.The minimum distance between the input waveguides (Δxi) /output waveguides (Δxo) /arrayed waveguides (d) is optimized respectively.Then the boundary structures between the free propagation regions (FPRs) and the arrayed waveguides (W2/L2/L3) are optimized in detail.The experiment results showthat the insertion loss of the AWG is 5 ~ 7 d B, and the crosstalk of it is 13 ~ 15 dB.Compared with our previous work, the performance of AWG in this paper has been improved greatly, and further methods to improve the performances of insertion loss and crosstalk have been proposed as well.

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YUAN Pei, WANG Yue, WU Yuan-Da, LIU Li-Jie, AN Jun-Ming, HU Xiong-Wei.25-channel 200 GHz AWG based on SOI ridge waveguides[J]. Journal of Infrared and Millimeter Waves,2018,37(6):673~678

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History
  • Received:March 26,2018
  • Revised:September 26,2018
  • Adopted:April 25,2018
  • Online: November 30,2018
  • Published: