D-carrier profiling in narrow quantum wells by a Schottky's current transport model based on scanning spreading resistance microscopy
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    Abstract:

    Current studies on the relationship between carrier concentration in nano-scale semiconductor structure and its local conductance is mainly on parameters fitting.For above connection, existing models rely on artificial fitting parameters such as ideal factor.For above reason, derivation of carrier concentration though measured local conductance can not be done.In this work, we present a scheme to obtain the carrier concentration in narrowquantum wells (QWs) .Cross-sectional scanning spreading resistance microscopy (SSRM) provides unparalleled spatial resolution (< 10 nm, Capable of characterizing single QW layer) in electrical characterization.High-resolution local conductance has been measured by SSRMon molecular beam epitaxy-grown GaAs/AlGaAs QWs cleaved surface (110) .Based on our experimental set-up, a model which describes conductance by the only argument, i.e.carrier concentration has been built.Using the model, our implementation derived carrier concentration from SSRMmeasured local conductance in GaAs/AlGaAs QWs (doping level:1016/cm3-1018/cm3) .Relative errors of the results are within 30%.

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HUANG Wen-Chao, WANG Xiao-Fang, CHEN Xiao-Shuang, XUE Yu-Xiong, YANG Sheng-Sheng. D-carrier profiling in narrow quantum wells by a Schottky's current transport model based on scanning spreading resistance microscopy[J]. Journal of Infrared and Millimeter Waves,2018,37(6):668~672

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History
  • Received:March 21,2018
  • Revised:September 25,2018
  • Adopted:August 14,2018
  • Online: December 01,2018
  • Published: